Layer forming method

ABSTRACT

There is provided a method of forming a layer, comprising depositing a seed layer on the substrate and depositing a bulk layer on the seed layer. Depositing the seed layer comprises supplying a first precursor comprising metal and halogen atoms to the substrate; and supplying a first reactant to the substrate. Depositing the bulk layer comprises supplying a second precursor comprising metal and halogen atoms to the seed layer and supplying a second reactant to the seed layer.

FIELD

The present disclosure generally relates to a method to form a layer ona substrate. More particularly, the disclosure relates to sequentiallyrepeating an atomic layer deposition (ALD) cycle or a chemical vapordeposition (CVD) process to form at least a part of the layer on asubstrate with gaps created during manufacturing of a feature. The layeron the substrate may be used for manufacturing of a semiconductordevice.

BACKGROUND

In atomic layer deposition (ALD) and chemical vapor deposition (CVD), asubstrate is subjected to a first precursor and a first reactantsuitable for reacting into a desired layer on the substrate. The layermay be deposited in a gap created during manufacturing of a feature onthe substrate to fill the gap.

In ALD the substrate is exposed to a pulse of the first precursor and amonolayer of the first precursor may be chemisorbed on the surface ofthe substrate. The surface sites may be occupied by the whole of or by afragment of the first precursor. The reaction may be chemicallyself-limiting because the first precursor will not adsorb or react withthe portion of the first precursor that has already been adsorbed on thesubstrate surface. The excess of the first precursor is then purged, forexample by providing an inert gas and/or removing the first precursorfrom a reaction chamber. Subsequently, the substrate is exposed to apulse of the first reactant, which chemically reacts with the adsorbedwhole or fragment of the first precursor until the reaction is completeand the surface is covered with a monolayer of the reaction product.

It has been found that there may be a need to improve the quality of thedeposited layers.

SUMMARY

There may be a need for an improved method to form a deposited layer ona substrate. Accordingly, there may be provided a method of forming alayer, comprising: providing a substrate with gaps created duringmanufacturing of a feature and depositing a seed layer on the substrate;and depositing a bulk layer on the seed layer. Depositing the seed layermay comprise: supplying a first precursor comprising metal and halogenatoms to the substrate; and supplying a first reactant to the substrate,wherein a portion of the first precursor and the first reactant react toform at least a portion of the seed layer. Depositing the bulk layer maycomprise: supplying a second precursor comprising metal and halogenatoms to the seed layer; and, supplying a second reactant to the seedlayer, wherein a portion of the second precursor and the second reactantreact to form at least a portion of the bulk layer on the seed layer.The first and second precursor may be different.

By having different first and second precursor for the seed layer andthe bulk layer the properties of the seed layer and the bulk layer maybe optimized such that the quality of the total layer may be improved.The first and second reactant may be the same and comprise hydrogenatoms.

In some other embodiments, a method for semiconductor processing isprovided. The method includes depositing a metal layer into a gap in thesubstrate, thereby filling the gap.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features, aspects, and advantages of the inventiondisclosed herein are described below with reference to the drawings ofcertain embodiments, which are intended to illustrate and not to limitthe invention.

FIGS. 1a and 1b show a flowchart illustrating a method of depositing alayer according to an embodiment.

FIG. 2 shows a cross-section of a gap structure on a substrate filledwith a layer according to an embodiment.

DETAILED DESCRIPTION

A metal layers may be required as a conducting layer in a semiconductordevice. Gaps created during manufacturing of a feature of an integratedcircuit device may be filled with metal layers. The gaps may have a highaspect ratio in that their depth is much larger than their width.

The gaps may be extending vertically in already manufactured layershaving a substantially horizontal top surface. Gaps in a verticaldirection and filled with a metal may, for example, be used in a wordline of a memory integrated circuit of the dynamic random access memory(DRAM) type. Gaps in a vertical direction and filled with a metal may,for example, also be used in a logic integrated circuit. For example,metal filled gaps may be used as a gate fill in a P-type metal oxidesemiconductor (PMOS) or complementary metal oxide semiconductor (CMOS)integrated circuit or in a source/drain trench contact.

The gaps may also be arranged in a horizontal direction in alreadymanufactured layers. Again, the gaps may have a high aspect ratio inthat their depth, now in the horizontal direction, is much larger thantheir width. Gaps in the horizontal direction and filled with a metalmay, for example, be used in a word line of a memory integrated circuitof the 3D NAND type. The gaps may also be arranged in a combination ofvertical and horizontal directions.

The surface of the gaps may comprise one sort of deposited material.Alternatively, the surface of the gaps may comprise different sorts ofdeposited material. The surface of the gaps may, for example, comprisealuminum oxide and/or titanium nitride. When, for example, a molybdenumconductive layer may be required in the gaps it may be difficult todeposit the molybdenum on the different material in the gaps. It may berequired that the molybdenum layers may be covering the full surface ofthe gaps and fill the complete gap. Further, it may be required that themolybdenum layers may be covering the full surface of the gaps includingthe different sorts of material.

To fill the complete gap a seed layer may be deposited in the gap and abulk layer may be deposited on the seed layer. The seed layer may beformed by sequentially repeating a pretreatment atomic layer deposition(ALD) cycle. Alternatively, the seed layer may be formed by a chemicalvapor deposition (CVD) process. The CVD process may be pulsed whereinthe first precursor is supplied with pulses onto the substrate, whilecontinuously supplying the first reactant to the substrate. The bulklayer may be deposited on the seed layer by sequentially repeating abulk ALD cycle. Alternatively, the bulk layer may be deposited on theseed layer by a CVD process. The CVD process may be pulsed, wherein thesecond precursor is supplied with pulses onto the substrate whilecontinuously supplying the second reactant to the substrate.

FIGS. 1a and 1b show a flowchart illustrating a method of depositing alayer according to an embodiment, wherein a seed layer may be depositedin the gap and a bulk layer may be deposited on the seed layer. Apretreatment ALD cycle 1 for the seed layer may be shown in FIG. 1a anda bulk ALD cycle 2 for the bulk layer may be shown in FIG. 1 b.

After providing a substrate with a gap in step 3 in a reaction chamber afirst precursor comprising metal and halogen atoms may be supplied tothe substrate in step 5 for a first supply period T1 (see FIG. 1a ).Subsequently, additional supply of the first precursor to the substratemay be stopped, for example by purging a portion of the first precursorfrom the reaction chamber for a first removal period R1 in step 7.Further, the cycle may comprise supplying 9 a first reactant to thesubstrate for a second supply period T2. A portion of the firstprecursor and first reactant may react to form at least a portion of theseed layer on the substrate. Normally, it may take a few (around 50)cycles before deposition of the seed layer starts. Additional supply ofthe first reactant to the substrate may be stopped, for example bypurging a portion of the first reactant from the reaction chamber for asecond removal period R1 in step 10.

The first precursor and the first reactant may be selected to have aproper nucleation on the surface of the gaps. The pretreatment ALD cycle1 may be repeated N times to deposit the seed layer with N selectedbetween 100 and 1000, preferably 200 and 800, and more preferably 300and 600. The seed layer may have a thickness between 1 and 20,preferably 2 and 10, more preferably between 3 and 7 nm.

After the pretreatment ALD cycle 1 is repeated N times a secondprecursor comprising metal and halogen atoms may be supplied to thesubstrate in step 11 for a third supply period T3 in the bulk ALD cycle2 (see FIG. 1b ). This may be done in the same reaction chamber as thepretreatment ALD cycle 1 of FIG. 1a or in a different reaction chamber.It may be advantageous to do the bulk ALD cycle in a different reactionchamber than the pretreatment ALD cycle when the temperature requirementfor the pretreatment cycle may be different. A substrate transfer maytherefore be necessary. Subsequently, additional supply of the secondprecursor to the substrate may be stopped, for example by purging aportion of the second precursor from the reaction chamber for a thirdremoval period R3 in step 13.

Further, the cycle may comprise supplying 15 a second reactant to thesubstrate for a fourth supply period T4. A portion of the secondprecursor and the second reactant may react to form at least a portionof the bulk layer on the substrate. Additional supply of the secondreactant to the substrate may be stopped, for example, by purging aportion of the second reactant from the reaction chamber for a fourthremoval period R4 in step 17. The second precursor and the secondreactant may be selected to have proper electronical properties. Forexample to have a low electric resistivity. The molybdenum film may havean electrical resistivity of less than 3000 μΩ-cm, or less than 1000μΩ-cm, or less than 500 μΩ-cm, or less than 200 μΩ-cm, or less than 100μΩ-cm, or less than 50 μΩ-cm, or less than 25 μΩ-cm, or less than 15μΩ-cm or even less than 10 μΩ-cm.

The bulk ALD cycle 2 for the bulk layer may repeated M times with Mselected between 200 and 2000, preferably 400 and 1200, and morepreferably 600 and 1000. The bulk layer may have a thickness between 1and 100, preferably 5 and 50, more preferably between 10 and 30 nm.

The first and second precursor may comprise the same metal atom. Themetal may be a transition metal atom. The transition metal atom may bemolybdenum.

The first and second precursor may comprise the same halogen atom. Thehalogen atom may be a chloride. By having the same halogen thequalification of the tool and the process in the fab may be simplifiedsince only one halogen may need to be assessed. The first precursor maycomprise molybdenum pentachloride (MoCl₅).

The process temperature in the reaction chamber may be selected between300 and 800, preferably 400 and 700, and more preferably 450 and 550° C.during the pretreatment ALD cycle. The vessel in which the firstprecursor is vaporized may be maintained between 40 and 100, preferably60 and 80, and more preferably around 70° C.

The second precursor may comprise an additional atom not being a metalor halogen atom. The additional atom may be a chalcogen. The chalcogenmay be oxygen, sulfur, selenium or tellurium. The second precursor maycomprise molybdenum (VI) dichloride dioxide (MoO₂Cl₂).

The process temperature may be between 300 and 800, preferably 400 and700, and more preferably 500 and 650° C. during the bulk ALD cycle. Thevessel in which the second precursor is vaporized may be maintainedbetween 20 and 150, preferably 30 and 120, and more preferably 40 and110° C.

Supplying the first and/or second precursor into the reaction chambermay take a duration T1, T3 selected between 0.1 and 10, preferably 0.5and 5, and more preferably 0.8 and 2 seconds. For example, T1 may be 1second and T3 may be 1.3 seconds. The flow of the first or secondprecursor into the reaction chamber may be selected between 50 and 1000,preferably 100 and 500, and more preferably 200 and 400 sccm. Thepressure in the reaction chamber may be selected between 0.1 and 100,preferably 1 and 50, and more preferably 4 and 20 Torr.

One or both of the first and second reactants may have hydrogen atoms.At least one of the first and second reactant may comprise hydrogen(H₂). The first and second reactant may be the same. Supplying the firstand/or second reactant into the reaction chamber for a duration T2, T4may take between 0.5 and 50, preferably 1 and 10, and more preferably 2and 8 seconds. The flow of the first or second reactant into thereaction chamber may be between 50 and 50000, preferably 100 and 20000,and more preferably 500 and 10000 sccm.

Silane may be considered for the first and/or second reactant. Thegeneral formula for silane is Si_(x)H2_((x+2)) were x is an integer 1,2, 3, 4 . . . Silane (SiH₄), disilane (Si₂H₆) or trisilane (Si₃H₈) maybe suitable examples for the first and or second reactant havinghydrogen atoms.

Purging a portion of at least one of the first precursor, the firstreactant, the second precursor and the second reactant from the reactionchamber for a duration R1, R2, R3 or R4 may be selected between 0.5 and50, preferably 1 and 10, and more preferably 2 and 8 seconds. Purgingmay be used after supplying the first precursor to the substrate; aftersupplying the first reactant to the substrate; after supplying thesecond precursor to the seed layer; and after supplying the secondreactant to the seed layer to remove a portion of at least one of thefirst precursor, the first reactant, the second precursor and the secondreactant from the reaction chamber for a duration R1, R2, R3 or R4.Purging may be accomplished by pumping and/or by providing a purge gas.The purge gas may be an inert gas such as nitrogen.

The method may be used in a single or batch wafer ALD apparatus. Themethod comprising providing the substrate in a reaction chamber and thepretreatment ALD cycles in the reaction chamber may comprise: supplyingthe first precursor to the substrate in the reaction chamber; purging aportion of the first precursor from the reaction chamber; supplying thefirst reactant to the substrate in the reaction chamber; and purging aportion of the first reactant from the reaction chamber. Further themethod comprises providing the substrate in a reaction chamber and thebulk ALD cycles in the reaction chamber comprises: supplying the secondprecursor to the substrate in the reaction chamber; purging a portion ofthe second precursor from the reaction chamber; supplying the secondreactant to the substrate in the reaction chamber; and purging a portionof the second reactant from the reaction chamber.

Exemplary single wafer reactors, designed specifically to perform ALDprocesses, are commercially available from ASM International NV (Almere,The Netherlands) under the tradenames Pulsar®, Emerald®, Dragon® andEagle®. The method may also be performed in a batch wafer reactor e.g.,a vertical furnace. For example, the deposition processes may beperformed in an A412™ vertical furnace available from ASM InternationalN.V. as well. The furnace may have a process chamber that canaccommodate a load of 150 semiconductor substrates, or wafers, having adiameter of 300 mm.

The wafer reactors may be provided with a controller and a memory whichmay control the reactor. The memory may be programmed with a program tosupply the precursors and the reactants in the reaction chamber inaccordance with the embodiments of this disclosure when executed on thecontroller.

FIG. 2 shows a cross-section of a gap structure on a substrate filledwith a layer according to an embodiment of this disclosure. As shown,the gap may be extending vertically and horizontally in alreadymanufactured layers having a substantially horizontal top surface.

The gaps may have a high aspect ratio in that the depth vertically andor horizontally is much larger than the width. For example, in thevertical direction the gap has a width of 207 nm at the top, 169 nm inthe middle and 149 nm at the bottom while the depth of the gap is muchlarger with 432 nm. For example, in the horizontal direction the firstgap from the top has a width of 34 nm while the depth of the gap is muchlarger with 163 nm (rounded off). The aspect ratios (gap depth/gapwidth) of the gap may be more than about 2, more than about 5, more thanabout 10, more than about 20, more than about 50, more than about 75 orin some instances even more than about 100 or more than about 150 ormore than about 200.

It may be noted that the aspect ratio may be difficult to determine forthe gap, but in this context the aspect ratio may be replaced by thesurface enhancement ratio which may be the ratio of the total surfacearea of the gap in the wafer or part of the wafer in relation to theplanar surface area of wafer or part of the wafer. The surfaceenhancement ratio (surface gaps/surface wafer) of the gap may be morethan about 2, more than about 5, more than about 10, more than about 20,more than about 50, more than about 75 or in some instances even morethan about 100 or more than about 150 or more than about 200.

The surface of the gaps may comprise different sorts of depositedmaterial 19, 21. The surface may for example comprise Al₂O₃ or TiN.

A conformal metal layer 23 is deposited on the surface of the gap bydepositing a seed layer by sequentially repeating a pretreatment ALDcycle with a first precursor and depositing a bulk layer by sequentiallyrepeating a bulk ALD cycle with a second precursor. Details of the usedmethod are shown in FIGS. 1a and 1b and the related description. In someembodiments, a deposited film comprising Mo may have a step coveragegreater than about 50%, greater than about 80%, greater than about 90%,greater than about 95%, greater than about 98%, greater than about 99%.

The first and second precursor may comprise the same metal atom, forexample a transition metal atom such as molybdenum. The first and secondprecursor may comprise the same halogen atom, for example a chloride.The first precursor may comprise MoCl5. The second precursor maycomprise an additional atom not being a metal or halogen atom forexample a chalcogenide atom such as oxygen. The second precursor maycomprise molybdenum(VI) dichloride dioxide (MoO₂Cl₂). The method may beperformed in an atomic layer deposition apparatus. For example, thedeposition processes may be performed in an EMERALD® XP ALD apparatus.

The first and second reactants were hydrogen (H₂) which was supplied inthe reaction chamber for a duration T2, T4 of 5 seconds with a flow of495 sccm. A purge gas of nitrogen was used after supplying the firstprecursor; after supplying the first reactant; after supplying thesecond precursor; and after supplying the second reactant for a durationR1, R2, R3 or R4 of 5 seconds.

The process temperature was around 550° C. and the pressure was around10 Torr during the pretreatment and bulk ALD cycles. The vessel in whichthe first precursor was vaporized was around 70° C. The vessel in whichthe second precursor was vaporized was around 35° C.

A seed layer of about 4.6 nm was deposited using the pretreatment ALDcycle for 500 cycles and a bulk layer of about 21.4 nm was depositedusing the bulk ALD cycle for 800 cycles. As shown, the molybdenum layer23 is deposited very uniformly over the surface of the gap and had atotal thickness of about 26 nm.

The orientation of the gap, whether it is horizontal or vertical and thewidth of the gap doesn't seem to influence the thickness of the layer 23substantially. Further the material of the surface whether it is Al₂O₃19 or TiN 21 doesn't seem to influence the thickness of the layer 23either. In this way, it becomes possible to create metal filled gapswith a good uniformity.

The method may also be used in a spatial atomic layer depositionapparatus. In spatial ALD, the precursor and reactant are suppliedcontinuously in different physical sections and the substrate is movingbetween the sections. There may be provided at least two sections where,in the presence of a substrate, a half-reaction can take place. If thesubstrate is present in such a half-reaction section, a monolayer mayform from the first or second precursor. Then, the substrate is moved tothe second half-reaction zone, where the ALD cycle is completed with thefirst or second reactant to form one ALD monolayer. Alternatively thesubstrate position could be fixed and the gas supplies could be moved,or some combination of the two. To obtain thicker films, this sequencemay be repeated.

Accordingly to an embodiment in a spatial ALD apparatus the methodcomprises:

placing the substrate in a reaction chamber comprising a plurality ofsections, each section separated from adjacent sections by a gascurtain;

supplying the first precursor to the substrate in a first section of thereaction chamber;

laterally moving the substrate surface with respect to the reactionchamber through a gas curtain to a second section of the reactionchamber;

supplying the first reactant to the substrate in the second section ofthe reaction chamber to form the seed layer;

laterally moving the substrate surface with respect to the reactionchamber through a gas curtain; and

repeating supplying the first precursor and the reactant includinglateral movement of the substrate surface with respect to the reactionchamber to form the seed layer.

To form the bulk layer the method further comprises:

placing the substrate in a reaction chamber comprising a plurality ofsections, each section separated from adjacent sections by a gascurtain;

supplying the second precursor to the substrate in a first section ofthe reaction chamber;

laterally moving the substrate surface with respect to the reactionchamber through a gas curtain to a second section of the reactionchamber;

supplying the second reactant to the substrate in the second section ofthe reaction chamber to form the bulk layer;

laterally moving the substrate surface with respect to the reactionchamber through a gas curtain; and

repeating supplying the second precursor and the reactant includinglateral movement of the substrate surface with respect to the reactionchamber to form the bulk layer.

The first and second precursor may be different. The first and secondreactant may be the same and comprise hydrogen atoms.

According to an embodiment, the seed layer may be deposited with achemical vapor deposition (CVD) process wherein the first precursor andthe first reactant are simultaneously supplied to the substrate. Thebulk layer may be deposited with a CVD process, wherein the secondprecursor and the second reactant may be simultaneously supplied to thesubstrate as well.

The CVD processes may be pulsed CVD processes, wherein the precursorsare supplied with pulses to the substrate while continuously supplyingthe reactants to the substrate. The advantage may be that the higherconcentration of reactant may lower the concentration of the halogens.High concentration of halogens may be damaging for the semiconductordevices on the substrate.

For example in a pulsed CVD process for the seed layer the firstprecursor molybdenum pentachloride (MoCl5) may be provided with pulsesof 1 second alternating with a 5 seconds purge gas flow. The firstreactant hydrogen may be supplied continuously with a flow rate of 500sccm and the substrate may be kept at 550° C.

Exemplary single wafer reactors, designed specifically to perform CVDprocesses, are commercially available from ASM International NV (Almere,The Netherlands) under the tradenames Dragon®. The method may also beperformed in a batch wafer reactor, e.g., a vertical furnace. Forexample, the deposition processes may be performed in an A400™, or A412™vertical furnace available from ASM International N.V. as well. Thefurnace may have a process chamber that can accommodate a load of 150semiconductor substrates, or wafers.

In additional embodiments, the seed or bulk layer may comprise less thanabout 40 at. %, less than about 30 at. %, less than about 20 at. %, lessthan about 10 at. %, less than about 5 at. %, or even less than about 2at. % oxygen. In further embodiments, the seed or bulk layer maycomprise less than about 30 at. %, less than about 20 at. %, less thanabout 10 at. %, or less than about 5 at. %, or less than about 2 at. %,or even less than about 1 at. % of hydrogen. In some embodiments, theseed or bulk layer may comprise halide or chloride less than about 10at. %, or less than about 5 at. %, less than about 1 at. %, or even lessthan about 0.5 at. %. In yet further embodiments, the seed or bulk layermay comprise less than about 10 at. %, or less than about 5 at. %, orless than about 2 at. %, or less than about 1 at. %, or even less thanabout 0.5 at. % carbon. In the embodiments outlined herein, the atomicpercentage (at. %) concentration of an element may be determinedutilizing Rutherford backscattering (RBS).

In some embodiments of the disclosure, forming a semiconductor devicestructure, such as semiconductor device structure, may comprise forminga gate electrode structure comprising a molybdenum film, the gateelectrode structure having an effective work function greater thanapproximately 4.9 eV, or greater than approximately 5.0 eV, or greaterthan approximately 5.1 eV, or greater than approximately 5.2 eV, orgreater than approximately 5.3 eV, or even greater than approximately5.4 eV. In some embodiments, the effective work function values givenabove may be demonstrated for an electrode structure comprising amolybdenum film with a thickness of less than approximately 100Angstroms, or less than approximately 50 Angstroms, or less thanapproximately 40 Angstroms, or even less than approximately 30Angstroms.

It will be appreciated by those skilled in the art that variousomissions, additions and modifications can be made to the processes andstructures described above without departing from the scope of theinvention. It is contemplated that various combinations orsub-combinations of the specific features and aspects of the embodimentsmay be made and still fall within the scope of the description. Variousfeatures and aspects of the disclosed embodiments can be combined with,or substituted for, one another in any order. All such modifications andchanges are intended to fall within the scope of the invention, asdefined by the appended claims.

1. A method of forming a layer, comprising: providing a substrate withgaps created during manufacturing of a feature; depositing a seed layeron the substrate; and depositing a bulk layer directly after the step ofdepositing the seed layer, wherein depositing the seed layer comprises:supplying a first precursor comprising metal and halogen atoms to thesubstrate; and supplying a first reactant to the substrate, wherein aportion of the first precursor and the first reactant react to form atleast a portion of the seed layer; wherein depositing the bulk layercomprises: supplying a second precursor comprising metal and halogenatoms to the seed layer; and, supplying a second reactant to the seedlayer, wherein a portion of the second precursor and the second reactantreact to form at least a portion of the bulk layer on the seed layer,wherein the first and second precursor are different, and wherein atleast one of the first and second precursors comprises a transitionmetal atom.
 2. The method according to claim 1, wherein at least one ofthe first and second reactant comprises hydrogen atoms.
 3. The methodaccording to claim 2, wherein at least one of the first and secondreactant comprises hydrogen (H₂).
 4. The method according to claim 1,wherein the first and second precursor comprise the same metal atom. 5.(canceled)
 6. The method according to claim 1, wherein the transitionmetal atom is molybdenum.
 7. The method according to claim 1, whereinthe first and second precursor comprise the same halogen atom.
 8. Themethod according to claim 1, wherein the halogen atom is chloride. 9.The method according to claim 1, wherein the first precursor comprisesmolybdenum pentachloride (MoCl₅).
 10. The method according to claim 1,wherein the second precursor comprises an additional atom not being ametal or halogen atom.
 11. The method according to claim 10, wherein theadditional atom is a chalcogenide.
 12. The method according to claim 11,wherein the chalcogenide is oxygen.
 13. The method according to claim12, wherein the second precursor comprises molybdenum(VI) dichloridedioxide (MoO₂Cl₂).
 14. The method according to claim 1, wherein at leastone of the first and second precursor is supplied with pulses into areaction chamber and the pulses are between 0.1 and 10 seconds.
 15. Themethod according to claim 1, wherein a flow of the first or secondprecursor into a reaction chamber is between 50 and 1000 sccm.
 16. Themethod according to claim 1, wherein a flow of the first or secondreactant into a reaction chamber is between 50 and 50000 sccm.
 17. Themethod according to claim 1, wherein a pressure in a reaction chamber isbetween 0.1 and 100 Torr.
 18. The method according to claim 1, wherein aprocess temperature is between 300 and 800° C.
 19. The method accordingto claim 1, wherein depositing of the seed layer comprises repeating anatomic layer deposition (ALD) cycle comprising sequentially supplyingthe first precursor to the substrate; and supplying the first reactantto the substrate.
 20. The method according to claim 19, wherein inbetween supplying the first precursor, the first reactant, the secondprecursor or the second reactant to the substrate the substrate ispurged between 0.5 and 50 seconds.
 21. The method according to claim 19,wherein supplying the first and/or second reactant into a reactionchamber takes between 0.5 and 50 seconds.
 22. The method according toclaim 19, wherein for depositing the seed layer a pretreatment ALD cycleis repeated between 100 and 1000 times and for depositing the bulk layerthe bulk ALD cycle is repeated between 200 and 2000 times.
 23. Themethod according to claim 1, wherein depositing at least one of the seedand bulk layer comprises a chemical vapor deposition (CVD) processwherein the precursor is supplied simultaneously with the reactant tothe substrate.
 24. A method of forming a layer, comprising: providing asubstrate with gaps created during manufacturing of a feature;depositing a seed layer on the substrate; and depositing a bulk layer ondirectly after the step of depositing the seed layer, wherein depositingthe seed layer comprises: supplying a first precursor comprising metaland halogen atoms to the substrate; and supplying a first reactant tothe substrate, wherein a portion of the first precursor and the firstreactant react to form at least a portion of the seed layer; whereindepositing the bulk layer comprises: supplying a second precursorcomprising metal and halogen atoms to the seed layer; and, supplying asecond reactant to the seed layer, wherein a portion of the secondprecursor and the second reactant react to form at least a portion ofthe bulk layer on the seed layer, wherein the first and second precursorare different, and wherein the first precursor comprises molybdenumpentachloride (MoCl5).
 25. A method of forming a layer, comprising:providing a substrate with gaps created during manufacturing of afeature; depositing a seed layer on the substrate; and depositing a bulklayer on directly after the step of depositing the seed layer, whereindepositing the seed layer comprises: supplying a first precursorcomprising metal and halogen atoms to the substrate; and supplying afirst reactant to the substrate, wherein a portion of the firstprecursor and the first reactant react to form at least a portion of theseed layer; wherein depositing the bulk layer comprises: supplying asecond precursor comprising metal and halogen atoms to the seed layer;and, supplying a second reactant to the seed layer, wherein a portion ofthe second precursor and the second reactant react to form at least aportion of the bulk layer on the seed layer, wherein the first andsecond precursor are different, and wherein the second precursorcomprises a chalcogenide.